Power IC device and method for manufacturing same
US8299525B2 · kind B2 · utility
0Cited by
8References
22Claims
0Family size
Assignee
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Key dates
| Filing date | Mar 20, 2007 |
| Grant date | Oct 30, 2012 |
| Priority date | — |
| Expiry date | Feb 4, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/62
Abstract
In a power IC device, a surface layer channel CMOS transistor and a trench power MOS transistor are formed on the same chip. In one embodiment, a source region of the trench power MOS transistor is arranged at the same level as a gate electrode of the surface layer channel CMOS transistor. Thus, the power IC device and a method for manufacturing the power IC device are provided for reducing manufacturing cost in the case of forming the trench power MOS transistor and the surface layer channel CMOS transistor on the same chip.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.