Magnetoresistive element and magnetic memory
US8299552B2 · kind B2 · utility
24Cited by
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18Claims
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Key dates
| Filing date | Sep 18, 2008 |
| Grant date | Oct 30, 2012 |
| Priority date | — |
| Expiry date | Apr 12, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B61/22
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A magnetoresistive element includes a first underlying layer having an NaCl structure and containing a nitride orienting in a (001) plane, a first magnetic layer provided on the first underlying layer, having magnetic anisotropy perpendicular to a film surface, having an L10 structure, and containing a ferromagnetic alloy orienting in a (001) plane, a first nonmagnetic layer provided on the first magnetic layer, and a second magnetic layer provided on the first nonmagnetic layer and having magnetic anisotropy perpendicular to a film surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.