Power semiconductor module and manufacturing method thereof
US8299601B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 4, 2009 |
| Grant date | Oct 30, 2012 |
| Priority date | — |
| Expiry date | Jan 15, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/1815
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A power semiconductor module includes: a circuit board having a metal base plate, a high thermal conductive insulating layer, and a wiring pattern; power semiconductor elements electrically connected to the wiring pattern; tubular external terminal connection bodies provided to the wiring pattern for external terminals; and a transfer mold resin body encapsulated to expose through-holes in the metal base plate and used to fixedly attach cooling fins to the face of the metal base plate on the other side with attachment members, the face of the metal base plate on the other side, and top portions of the tubular external terminal connection bodies, to form insertion holes for the attachment members communicating with the through-holes and having a larger diameter than the through-holes, and to cover the one side and side faces of the metal base plate and the power semiconductor elements.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.