IC devices having TSVS including protruding tips having IMC blocking tip ends
US8299612B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 14, 2011 |
| Grant date | Oct 30, 2012 |
| Priority date | — |
| Expiry date | Sep 14, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/1461
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A through substrate via (TSV) die includes a plurality of TSVs including an outer dielectric sleeve, an inner metal core and protruding TSV tips including sidewalls that emerge from the TSV die. A passivation layer lateral to protruding TSV tips is on a portion of the sidewalls of protruding TSV tips. The passivation layers is absent from a distal portion of protruding TSV tips to provide an exposed portion of the inner metal core. The TSV tips include bulbous distal tip ends which cover a portion of the TSV sidewalls, are over a topmost surface of the outer dielectric sleeve, and have a maximum cross sectional area that is ≧25% more as compared to a cross sectional area of the protruding TSV tips below the bulbous distal tip ends.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.