Stacked CMOS power amplifier and RF coupler devices and related methods
US8301106B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Feb 10, 2010 |
| Grant date | Oct 30, 2012 |
| Priority date | — |
| Expiry date | Jun 2, 2031 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49117
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
Stacked CMOS power amplifier (PA) and radio frequency (RF) coupler devices and related methods are disclosed. The stacked device includes a CMOS PA die configured to receive a transmit input signal and to output an amplified transmit signal, and a RF coupler device configured to receive the amplified transmit signal, to output an antenna transmit signal, and to output an RF signal proportional to the antenna transmit signal. The CMOS PA die and the RF coupler device are stacked on top of and electrically coupled to each other, and the CMOS PA die and the RF coupler device are combined within a single semiconductor package. In some embodiments, the RF coupler device is positioned on top of the CMOS PA die, and in other embodiments the CMOS PA die is positioned on top of the RF coupler device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.