Organic field effect transistor and making method
US8304761B2 · kind B2 · utility
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3References
8Claims
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Key dates
| Filing date | Mar 25, 2008 |
| Grant date | Nov 6, 2012 |
| Priority date | — |
| Expiry date | Mar 4, 2030 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC09D133/18
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
In an organic field effect transistor with an electrical conductor-insulator-semiconductor structure, the semiconductor layer is made of an organic compound, and the insulator layer is made of a polymer obtained through polymerization or copolymerization of 2-cyanoethyl acrylate and/or 2-cyanoethyl methacrylate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.