Thin film transistor
US8304775B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 2, 2010 |
| Grant date | Nov 6, 2012 |
| Priority date | — |
| Expiry date | Jan 11, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K59/123
Abstract
A thin film transistor includes a gate insulating layer covering a gate electrode, a semiconductor layer in contact with the gate insulating layer, and impurity semiconductor layers which are in contact with part of the semiconductor layer and which form a source region and a drain region. The semiconductor layer includes a microcrystalline semiconductor layer formed on the gate insulating layer and a microcrystalline semiconductor region containing nitrogen in contact with the microcrystalline semiconductor layer. The thin film transistor in which off-current is small and on-current is large can be manufactured with high productivity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.