HEMT device and a manufacturing of the HEMT device
US8304811B2 · kind B2 · utility
16Cited by
1References
18Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Mar 4, 2009 |
| Grant date | Nov 6, 2012 |
| Priority date | — |
| Expiry date | Mar 14, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/693
Abstract
A HEMT device and a manufacturing of the HEMT device, the HEMT device includes: a buffer layer (14) on the substrate (12); a semiconductor layer on the buffer layer (14); an isolation layer (16, 17) on the semiconductor layer; a source electrode (22) and a drain electrode (23) contacted with the semiconductor layer; and a gate electrode (24, 104 114) between the source electrode (22) and the drain electrode (23); wherein, a channel, which is located in the semiconductor layer below the gate electrode (24, 104, 114), is pinched off.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.