Semiconductor device having on a substrate a diode formed by making use of a DMOS structure

US8304827B2 · kind B2 · utility

Assignee

• Kabushiki Kaisha Toshiba · JP

Inventors

• Yuki Nakamura · Tokyo, JP
• Koji Shirai · Chiba, JP
• Hirofumi Nagano · Yokohama, JP
• Jun Morioka · Kawasaki, JP
• Tsubasa Yamada · Yokohama, JP
• Kazuaki Yamaura · Kawasaki, JP
• Yasunori Iwatsu · Chigasaki, JP

Key dates

• Filing date: Dec 22, 2009
• Grant date: Nov 6, 2012
• Expiry date: Sep 17, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/811

Abstract

A semiconductor device includes a diode formed by making use of a DMOS transistor structure. In addition to such a DMOS transistor structure, the semiconductor device includes a second buried layer of the first conductivity type being provided on a first buried layer of a second conductivity type that is in a floating state. Moreover, the second buried layer of the first conductivity type and a second diffusion region of the first conductive type are connected by a first diffusion region of the first conductivity type. A first electrode is set as anode, and a second electrode and a third electrode are short-circuited and set as cathode.