Infrared imaging device and method of manufacturing the same
US8304848B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 16, 2010 |
| Grant date | Nov 6, 2012 |
| Priority date | — |
| Expiry date | Sep 17, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH04N23/20
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
Certain embodiments provide an infrared imaging device including: an SOI structure that is placed at a distance from a substrate, and includes: heat-sensitive diodes that detect infrared rays and convert the infrared rays into heat; and STI regions that separate the heat-sensitive diodes from one another; an interlayer insulating film that is stacked on the SOI structure; and supporting legs that are connected to the heat-sensitive diodes and vertical signal lines provided in outer peripheral regions of the heat-sensitive diodes. Each of the supporting legs includes: an interconnect unit that transmit signals to the vertical signal lines; and interlayer insulating layers that sandwich the interconnect unit, each bottom side of the interlayer insulating layers being located in a higher position than the SOI structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.