Patent · US Active

Power semiconductor module and fabrication method thereof

US8304889B2 · kind B2 · utility

0Cited by
4References
13Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMar 26, 2010
Grant dateNov 6, 2012
Priority date
Expiry dateMar 26, 2030

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH05K2201/10318
  • WIPO fieldAudio-visual technology
  • WIPO sectorElectrical engineering

Abstract

An elastic printed board is provided so that stress applied by the silicon gel is absorbed by the printed board. Further, the printed board is formed to be so narrow that the stress can escape. On the other hand, the wires on which a high voltage is applied are patterned on respective printed boards. This serves to prevent discharge through the surface of the same printed board serving as a current passage. This design makes it possible to hermetically close the power module, prevent intrusion of moisture or contamination as well as displacement, transformation and cracks of the cover plate.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.