Semiconductor device and method for manufacturing the same
US8304915B2 · kind B2 · utility
10Cited by
3References
23Claims
0Family size
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Key dates
| Filing date | Jul 23, 2009 |
| Grant date | Nov 6, 2012 |
| Priority date | — |
| Expiry date | Oct 12, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K2203/1469
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a plural number of interconnects and a plural number of vias are stacked. A semiconductor element is enclosed in an insulation layer. At least one of the vias provided in insulation layers and/or at least one of interconnects provided in the interconnect layers are of cross-sectional shapes different from those of the vias formed in another one of the insulation layers and/or interconnects provided in another one of the interconnect layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.