Film-like article and method for manufacturing the same
US8305213B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 20, 2005 |
| Grant date | Nov 6, 2012 |
| Priority date | — |
| Expiry date | Feb 2, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/00
Abstract
Since the chip formed from a silicon wafer is thick, the chip is protruded from the surface or the chip is so large that it can be seen through the eyes, which affects the design of a business card or the like. Hence, it is an object of the present invention to provide a new integrated circuit which has a structure by which the design is not affected. In view of the above problems, it is a feature of the invention to equip a film-like article with a thin film integrated circuit. It is another feature of the invention that the IDF chip has a semiconductor film of 0.2 mm or less, as an active region. Therefore, the IDF chip can be made thinner as compared with a chip formed from a silicon wafer. In addition, such an integrated circuit can have light transmitting characteristic unlike a chip formed from a silicon wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.