Magnetoresistive element and magnetic memory
US8305801B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 8, 2011 |
| Grant date | Nov 6, 2012 |
| Priority date | — |
| Expiry date | Mar 8, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B61/22
Abstract
A magnetoresistive element according to an embodiment includes: a first ferromagnetic layer having an axis of easy magnetization in a direction perpendicular to a film plane; a second ferromagnetic layer having an axis of easy magnetization in a direction perpendicular to a film plane; a nonmagnetic layer placed between the first ferromagnetic layer and the second ferromagnetic layer; a first interfacial magnetic layer placed between the first ferromagnetic layer and the nonmagnetic layer; and a second interfacial magnetic layer placed between the second ferromagnetic layer and the nonmagnetic layer. The first interfacial magnetic layer includes a first interfacial magnetic film, a second interfacial magnetic film placed between the first interfacial magnetic film and the nonmagnetic layer and having a different composition from that of the first interfacial magnetic film, and a first nonmagnetic film placed between the first interfacial magnetic film and the second interfacial magnetic film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.