Patent · US Active

Systems and methods for magnetron deposition

US8308915B2 · kind B2 · utility

1Cited by
144References
19Claims
0Family size

Assignee

Inventor

Key dates

Filing dateSep 14, 2006
Grant dateNov 13, 2012
Priority date
Expiry dateMar 17, 2028

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01J37/3452
  • WIPO fieldElectrical machinery, apparatus, energy
  • WIPO sectorElectrical engineering

Abstract

Systems and methods are disclosed for face target sputtering to fabricate semiconductors by providing one or more materials with differential coefficients of expansion in the FTS chamber; and generating a controlled pressure and size with the one or more materials during sintering.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.