Electrically isolated vertical light emitting diode structure
US8309979B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 12, 2008 |
| Grant date | Nov 13, 2012 |
| Priority date | — |
| Expiry date | Mar 20, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/8581
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A light emitting device is provided having high luminous output while maintaining high wall plug efficiency, wherein the high thermal and electrical conductivity paths of the device are separated during the semiconductor wafer and die level manufacturing step. The device includes an electrical conducting mirror layer, which reflects at least 60% of generated light incident on it, and an isolation layer having electrical insulating properties and thermal conducting properties. A first electrode, which is not in contact with the main semiconductor layers of the device, is located on the mirror layer. A light emitting module, system and projection system incorporating the light emitting device are also described, as is a method of manufacture of the device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.