Integrated devices on a common compound semiconductor III-V wafer
US8309990B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 15, 2012 |
| Grant date | Nov 13, 2012 |
| Priority date | — |
| Expiry date | Feb 15, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/852
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A III-V compound semiconductor structure comprises epitaxial structures that include an integrated pair of different types of active devices. The semiconductor structure includes a semi-insulating substrate of a compound semiconductor III-V material and a first compound semiconductor III-V epitaxial structure disposed on the substrate. A concentration profile of dopant material in the semiconductor structure decreases substantially smoothly across an interface between the substrate and the first epitaxial structure in a direction from the first epitaxial structure toward the substrate, and continues to decrease substantially smoothly from the interface with increasing depth into the substrate despite the presence of silicon or oxygen contaminant at the interface. The interface is substantially free of a second contaminant that was present, during formation of the first epitaxial structure, in a chamber in which the first epitaxial structure was formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.