Patent · US Active

Switching element including carbon nanotubes and method for manufacturing the same

US8309992B2 · kind B2 · utility

2Cited by
0References
12Claims
0Family size

Assignee

Inventors

Key dates

Filing dateSep 8, 2008
Grant dateNov 13, 2012
Priority date
Expiry dateOct 11, 2029

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10K85/221
  • WIPO fieldMicro-structural and nano-technology
  • WIPO sectorChemistry

Abstract

A problem of a switching element using for the active layer a carbon nanotube (CNT) dispersion film that can be manufactured at low temperature has been that sufficient electrical contact and thermal conductivity between the CNTs and the source and drain electrode surfaces are not obtained. The switching element of the present invention has a structure in which a mixed layer of carbon nanotubes and a metal material, and a metal layer of the metal material are laminated in this order on source and drain electrodes, and thereby, the CNT-dispersed film and the electrode surfaces can be in firm electrical, mechanical, and thermal contact with each other. Thus, a switching element exhibiting good and stable transistor characteristics is obtained with a low-temperature, convenient, and low-cost process.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.