Photoelectric conversion device, method for manufacturing the same and image pickup system
US8309997B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 30, 2011 |
| Grant date | Nov 13, 2012 |
| Priority date | — |
| Expiry date | Aug 22, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/148
Abstract
An object of the present invention is to provide a photoelectric conversion device, wherein improvement of charge transfer properties when charge is output from a charge storage region and suppression of dark current generation during charge storage are compatible with each other. This object is achieved by forming a depletion voltage of a charge storage region in the range from zero to one half of a power source voltage (V), forming a gate voltage of a transfer MOS transistor during a charge transfer period in the range from one half of the power source voltage to the power source voltage (V) and forming a gate voltage of the transfer MOS transistor during a charge storage period in the range from minus one half of the power source voltage to zero (V).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.