Ferromagnetic semiconductor, method for the production thereof, components incorporating the same, and corresponding uses of said semiconductor
US8310018B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 1, 2007 |
| Grant date | Nov 13, 2012 |
| Priority date | — |
| Expiry date | Sep 2, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F41/30
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The inventive ferromagnetic semiconductor comprises at least one magnetic element selected from the group consisting of Mn, Fe, Co, Ni and Cr, and has a Curie temperature which is equal to or higher than 350 K, and advantageously 400 K or higher. The semiconductor has a matrix which is depleted in magnetic element(s) and contains a discontinuous phase which is formed from columns, enriched with magnetic elements, and is ferromagnetic up to said Curie temperature, in such a way as to generate a lateral modulation of the composition of the semiconductor in the plane of the thin layer. Also disclosed is a method for the production of the semiconductor, a diode-type electronic component for the injection or collection of spins into or from another semiconductor respectively, or an electronic component which is sensitive to a magnetic field, and uses of the semiconductor relating to such a component.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.