Semiconductor device and method for manufacturing same
US8310052B2 · kind B2 · utility
5Cited by
0References
17Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Nov 19, 2010 |
| Grant date | Nov 13, 2012 |
| Priority date | — |
| Expiry date | Jan 1, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes: a trench formed on an interlayer insulating film on a semiconductor substrate; a first barrier metal film formed to cover the bottom and sidewalls of the trench, the first barrier metal film being comprised of an electric conductor containing a platinum-group element, a refractory metal, and nitrogen; and a metal film formed on the first barrier metal film in the trench. The amount of nitrogen decreases in the thickness direction of the first barrier metal film toward the metal film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.