Semiconductor devices including voltage switchable materials for over-voltage protection
US8310064B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Feb 24, 2011 |
| Grant date | Nov 13, 2012 |
| Priority date | — |
| Expiry date | Feb 24, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/181
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Semiconductor devices are provided that employ voltage switchable materials for over-voltage protection. In various implementations, the voltage switchable materials are substituted for conventional die attach adhesives, underfill layers, and encapsulants. While the voltage switchable material normally functions as a dielectric material, during an over-voltage event the voltage switchable material becomes electrically conductive and can conduct electricity to ground. Accordingly, the voltage switchable material is in contact with a path to ground such as a grounded trace on a substrate, or a grounded solder ball in a flip-chip package.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.