Method for fabricating buried ion-exchanged waveguides using field-assisted annealing
US8312743B2 · kind B2 · utility
53Cited by
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Key dates
| Filing date | May 18, 2005 |
| Grant date | Nov 20, 2012 |
| Priority date | — |
| Expiry date | Sep 17, 2026 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC03C25/603
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A method for forming buried ion-exchanged waveguides involves a two-step process. In a first step a waveguide is formed at the surface of a substrate using an ion-exchange technique. After formation of the waveguide, a field-assisted annealing is carried out to move the waveguide away from the surface of the substrate so that it is buried in the substrate. Exemplary field-assisted annealing is carried out at a temperature close to the ion-exchange temperature ±10° C. to optimize results.
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