Cubic phase, nitrogen-based compound semiconductor films epitaxially grown on a grooved Si <001> substrate
US8313967B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 21, 2010 |
| Grant date | Nov 20, 2012 |
| Priority date | — |
| Expiry date | Dec 20, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/60
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of epitaxial growth of cubic phase, nitrogen-based compound semiconductor thin films on a semiconductor substrate, for example a <001> substrate, which is periodically patterned with grooves oriented parallel to the <110> crystal direction and terminated in sidewalls, for example <111> sidewalls. The method can provide an epitaxial growth which is able to supply high-quality, cubic phase epitaxial films on a <001> silicon substrate. Controlling nucleation on sidewall facets, for example <111>, fabricated in every groove and blocking the growth of the initial hexagonal phase at the outer region of an epitaxial silicon layer with barrier materials prepared at both sides of each groove allows growth of cubic-phase thin film in each groove and either be extended to macro-scale islands or coalesced with films grown from adjacent grooves to form a continuous film. This can result in a wide-area, cubic phase nitrogen-based compound semiconductor film on a <001> substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.