Nonvolatile memory devices that use resistance materials and internal electrodes, and related methods and processing systems
US8314003B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 5, 2011 |
| Grant date | Nov 20, 2012 |
| Priority date | — |
| Expiry date | May 5, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8833
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A nonvolatile memory device, a method of fabricating the nonvolatile memory device and a processing system including the nonvolatile memory device. The nonvolatile memory device may include a plurality of internal electrodes that extend in a direction substantially perpendicular to a face of a substrate, a plurality of first external electrodes that extend substantially in parallel with the face of the substrate, and a plurality of second external electrodes that also extend substantially in parallel with the face of the substrate. Each first external electrode is on a first side of a respective one of the internal electrodes, and each second external electrode is on a second side of a respective one of the internal electrodes. These devices also include a plurality of variable resistors that contact the internal electrodes, the first external electrodes and the second external electrodes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.