Semiconductor device and method for manufacturing the same
US8314032B2 · kind B2 · utility
44Cited by
11References
17Claims
0Family size
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Key dates
| Filing date | Jul 17, 2010 |
| Grant date | Nov 20, 2012 |
| Priority date | — |
| Expiry date | Jan 12, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6755
Abstract
A method for manufacturing a thin film transistor (TFT) through a process including back exposure, in which oxide semiconductor is used for a channel layer; using an electrode over a substrate as a mask, negative resist is exposed to light from the back of the substrate; the negative resist except its exposed part is removed; and an electrode is shaped by etching a conductive film using the exposed part as an etching mask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.