Patent · US Active

LED semiconductor element having increased luminance

US8314431B2 · kind B2 · utility

1Cited by

42References

11Claims

0Family size

Assignee

OSRAM Opto Semiconductors GmbH · DE

Inventors

Peter Heidborn · Bad Kötzting, DE
Reiner Windisch · Nittendorf, DE
Ralph Wirth · Lappersdorf, DE

Key dates

Filing date	May 26, 2011
Grant date	Nov 20, 2012
Priority date	—
Expiry date	May 26, 2031

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/0002
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

An LED semiconductor element including at least one first radiation-generating active layer and at least one second radiation-generating active layer which is stacked above the first active layer in a vertical direction and is connected in series with the first active layer, wherein the first active layer and the second active layer are electrically conductively connected by a contact zone.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.