Light emitting diode with nanostructures and method of making the same
US8314439B2 · kind B2 · utility
5Cited by
4References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 11, 2011 |
| Grant date | Nov 20, 2012 |
| Priority date | — |
| Expiry date | Jul 20, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/872
Abstract
A light emitting diode (LED) is provided along with a method of making the same. The LED includes a conductive n-type region formed on a substrate; an active region formed on the n-type region; a first p-type region formed on the active region; a plurality of nanostructures formed on the first p-type region to carry out light extraction from the active region, the nanostructures having a diameter less than 500 nm; a second p-type region regrown on the first p-type region to form a non-planar surface in combination with the nanostructures; and a p-type electrode formed on the non-planar surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.