Non-volatile memory devices
US8314457B2 · kind B2 · utility
1Cited by
37References
7Claims
0Family size
Assignee
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Key dates
| Filing date | Apr 27, 2011 |
| Grant date | Nov 20, 2012 |
| Priority date | — |
| Expiry date | Apr 27, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/037
Abstract
Non-volatile memory devices are provided including a control gate electrode on a substrate; a charge storage insulation layer between the control gate electrode and the substrate; a tunnel insulation layer between the charge storage insulation layer and the substrate; a blocking insulation layer between the charge storage insulation layer and the control gate electrode; and a material layer between the tunnel insulation layer and the blocking insulation layer, the material layer having an energy level constituting a bottom of a potential well.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.