Semiconductor device including vertical transistor and horizontal transistor
US8314459B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jul 30, 2010 |
| Grant date | Nov 20, 2012 |
| Priority date | — |
| Expiry date | Jan 4, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/13091
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a semiconductor substrate, a vertical transistor, a horizontal transistor, a lead, wire-bonding pads, and penetrating electrodes. The semiconductor substrate has first and second surfaces and includes a first surface portion adjacent to the first surface. The vertical transistor includes first and second electrodes on the first surface and a third electrode on the second surface. The horizontal transistor includes first, second, and third electrodes on the first surface. The vertical transistor and the horizontal transistor further include PN junction parts in the first surface portion. The lead is disposed to the first surface and is electrically coupled with the first electrode of the vertical transistor. The wire-bonding pads are disposed on the second surface. The second electrode of the vertical transistor and the first to third electrodes of the horizontal transistor are electrically coupled with the wire-boding pads through the penetrating electrodes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.