Variable ring width SDD
US8314468B2 · kind B2 · utility
2Cited by
7References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 12, 2009 |
| Grant date | Nov 20, 2012 |
| Priority date | — |
| Expiry date | Oct 16, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F30/29
- WIPO fieldEnvironmental technology
- WIPO sectorChemistry
Abstract
A silicon drift detector (SDD) comprising electrically isolated rings. The rings can be individually biased doped rings. One embodiment includes an SDD with a single doped ring. Some of the doped rings may not require a bias voltage. Some of the rings can be field plate rings. The field plate rings may all use the same biasing voltage as a single outer doped ring. The ring widths can vary such that the outermost ring is widest and the ring widths decrease with each subsequent ring towards the anode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.