Semiconductor structure comprising pillar
US8314472B2 · kind B2 · utility
7Cited by
8References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 29, 2010 |
| Grant date | Nov 20, 2012 |
| Priority date | — |
| Expiry date | Nov 12, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/60
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor structure comprises a substrate and a metal layer disposed over the substrate. The metal layer comprises a first electrical trace and a second electrical trace. The semiconductor structure comprises a conductive pillar disposed directly on and in electrical contact with the first electrical trace; and a dielectric layer selectively disposed between the metal layer and the conductive pillar. The dielectric layer electrically isolates the second electrical trace from the pillar.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.