Thin-film capacitor and electronic circuit board
US8315038B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 8, 2010 |
| Grant date | Nov 20, 2012 |
| Priority date | — |
| Expiry date | Dec 30, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K1/185
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A thin-film capacitor has a high insulation resistance value with high reliability. The thin-film capacitor includes a dielectric thin film and electrodes opposing each other through the dielectric thin film, the dielectric thin film containing a perovskite-type composite oxide having a composition expressed by (1), Mn, and at least one kind of element M selected from V, Nb, and Ta; wherein the dielectric thin film has an Mn content of 0.05 to 0.45 mol with respect to 100 mol of the composite oxide; and wherein the dielectric thin film has a total element M content of 0.05 to 0.5 mol with respect to 100 mol of the composite oxide:AyBO3 (1)where A is at least one kind of element selected from Ba, Sr, Ca, and Pb, B is at least one kind of element selected from Ti, Zr, Hf, and Sn, and 0.97≦y≦0.995.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.