Luminescence device and method of manufacturing the same
US8315080B2 · kind B2 · utility
4Cited by
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31Claims
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Key dates
| Filing date | Apr 23, 2008 |
| Grant date | Nov 20, 2012 |
| Priority date | — |
| Expiry date | Jan 22, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N89/00
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
Provided are a luminescent device and a method of manufacturing the same. The luminescent device includes a charge trapping layer having bistable conductance and negative differential resistance (NDR) characteristics, and an organic luminescent layer electrically connected to the charge trapping layer. The charge trapping layer comprise a nanocrystal layer intervened in an organic layer, and the nanocrystal layer comprises a plurality of nanocrystals.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.