Patent · US Active

Memory system that detects bit errors due to read disturbance and methods thereof

US8316278B2 · kind B2 · utility

14Cited by
18References
22Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJun 18, 2008
Grant dateNov 20, 2012
Priority date
Expiry dateSep 21, 2031

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG11C16/0483
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

Methods and memory systems are provided that detect bit errors due to read disturbances. A main page of a flash memory in a memory system is read. A bit error in data that is read from the main page is detected and corrected. In parallel with reading the main page, a bit error is detected in data that is read from a dummy page of the flash memory.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.