Microwave plasma reactors
US8316797B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 16, 2009 |
| Grant date | Nov 27, 2012 |
| Priority date | — |
| Expiry date | Nov 5, 2030 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B35/00
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
New and improved microwave plasma assisted reactors, for example chemical vapor deposition (MPCVD) reactors, are disclosed. The disclosed microwave plasma assisted reactors operate at pressures ranging from about 10 Torr to about 760 Torr. The disclosed microwave plasma assisted reactors include a movable lower sliding short and/or a reduced diameter conductive stage in a coaxial cavity of a plasma chamber. For a particular application, the lower sliding short position and/or the conductive stage diameter can be variably selected such that, relative to conventional reactors, the reactors can be tuned to operate over larger substrate areas, operate at higher pressures, and discharge absorbed power densities with increased diamond synthesis rates (carats per hour) and increased deposition uniformity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.