Spatially controlled atomic layer deposition in porous materials
US8318248B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 4, 2009 |
| Grant date | Nov 27, 2012 |
| Priority date | — |
| Expiry date | Aug 4, 2030 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/45555
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Methods for the selective deposition of materials within a porous substrate. The methods use the passivating effects of masking precursors applied to the porous substrate. A portion of a pore surface within the substrate is masked by exposing the substrate to one or more masking precursors. The depth of the pore surface that is masked is controllable by regulating the exposure of the substrate to the masking precursor. Application of the masking precursor prevents adsorption of one or more subsequently applied metal precursors about a portion of the pore surface coated by the masking precursor. Less than an entirety of the unmasked pore surface is coated by the metal precursor, forming a metal stripe on a portion of the pore surface. The depth of the metal stripe is controllable by regulating exposure of the porous substrate to the metal precursor. Subsequent exposure of the substrate to a saturating water application oxidizes the deposited precursors.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.