Method and system for continuous line-type landing polysilicon contact (LPC) structures
US8318556B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 11, 2010 |
| Grant date | Nov 27, 2012 |
| Priority date | — |
| Expiry date | Aug 31, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/10
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for making contact landing pad structures in a semiconductor integrated circuit device includes forming an isolation region and forming active regions in the semiconductor substrate. The active regions are separated by the isolation region, and each of the active regions includes one or more contact regions. The method includes forming a raised structure overlying the isolation region and disposed between a first and second contact regions. The method includes depositing a cap layer and forming an interlayer dielectric layer overlying the cap layer. The method includes depositing a photoresist layer overlying the interlayer dielectric layer and uses a mask pattern to selectively remove a portion of the photoresist layer to form a line type opening, which exposes a portion of the interlayer dielectric layer overlying at least the first and second contact regions. The method deposits a conductive fill material and performs a planarization process to form multiple conductive landing contact pads.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.