Method for manufacturing semiconductor device
US8318587B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 31, 2010 |
| Grant date | Nov 27, 2012 |
| Priority date | — |
| Expiry date | Dec 18, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02686
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
It is an object to provide a method for manufacturing an SOI substrate in which reduction in yield can be suppressed while impurity diffusion into a semiconductor film is suppressed. A semiconductor substrate provided with an oxide film is formed by thermally oxidizing the surface of the semiconductor substrate. Plasma is generated under an atmosphere of a gas containing nitrogen atoms and plasma nitridation is performed on part of the oxide film, so that a semiconductor substrate in which an insulating film containing nitrogen atoms is formed over the oxide film is obtained. After bonding the insulating film containing nitrogen atoms and a glass substrate to each other, the semiconductor substrate is split, whereby an SOI substrate in which the insulating film containing nitrogen atoms, the oxide film, a thin semiconductor film are stacked in this order is formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.