Patent · US Active

Composition for manufacturing SiO2 resist layers and method of its use

US8318613B2 · kind B2 · utility

1Cited by
0References
35Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMar 2, 2009
Grant dateNov 27, 2012
Priority date
Expiry dateMar 2, 2029

Classification

  • Technology area (CPC C)Chemistry; Metallurgy
  • CPC primaryC23C18/12
  • WIPO fieldSurface technology, coating
  • WIPO sectorChemistry

Abstract

The present invention relates to compositions, which are useful for the generation of patterned or structured SiO2-layers or of SiO2-lines during the manufacturing process of semiconductor devices, and which are suitable for the application in inkjet operations. The present invention also relates to a modified process of manufacturing semiconductor devices taking advantage of these new compositions.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.