Composition for manufacturing SiO2 resist layers and method of its use
US8318613B2 · kind B2 · utility
1Cited by
0References
35Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 2, 2009 |
| Grant date | Nov 27, 2012 |
| Priority date | — |
| Expiry date | Mar 2, 2029 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C18/12
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention relates to compositions, which are useful for the generation of patterned or structured SiO2-layers or of SiO2-lines during the manufacturing process of semiconductor devices, and which are suitable for the application in inkjet operations. The present invention also relates to a modified process of manufacturing semiconductor devices taking advantage of these new compositions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.