Patent · US Active

Porous semiconductor film on a substrate

US8319098B2 · kind B2 · utility

1Cited by

2References

5Claims

0Family size

Assignee

Sony Deutschland GmbH · DE

Inventors

Michael Duerr · Mannheim, DE
Andreas Schmid · Duisburg, DE
Gabriele Nelles · Stuttgart, DE
Akio Yasuda · Eßlingen, DE

Key dates

Filing date	Mar 28, 2011
Grant date	Nov 27, 2012
Priority date	—
Expiry date	May 30, 2031

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY02P70/50
WIPO fieldElectrical machinery, apparatus, energy
WIPO sectorElectrical engineering

Abstract

The invention relates to a method of producing a porous semiconductor film and the film resulting from such production. It furthermore relates to an electronic device incorporating such film and to potential uses of such film.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.