Oxide semiconductor layer and semiconductor device

US8319218B2 · kind B2 · utility

Assignee

• Semiconductor Energy Laboratory Co., Ltd. · JP

Inventors

• Shunpei Yamazaki · Setagaya, JP
• Masayuki Sakakura · Yokohama, JP
• Akiharu Miyanaga · Yokohama, JP
• Masahiro Takahashi · Atsugi, JP
• Takuya Hirohashi · Atsugi, JP
• Takashi Shimazu · Nagoya, JP

Key dates

• Filing date: Oct 4, 2010
• Grant date: Nov 27, 2012
• Expiry date: Dec 6, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/6757

Abstract

An object is to provide an oxide semiconductor layer having a novel structure which is preferably used for a semiconductor device. Alternatively, another object is to provide a semiconductor device using an oxide semiconductor layer having the novel structure. An oxide semiconductor layer includes an amorphous region which is mainly amorphous and a crystal region containing crystal grains of In2Ga2ZnO7 in a vicinity of a surface, in which the crystal grains are oriented so that the c-axis is almost vertical with respect to the surface. Alternatively, a semiconductor device uses such an oxide semiconductor layer.