Optical semiconductor device and method for manufacturing the same
US8319229B2 · kind B2 · utility
2Cited by
1References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 13, 2010 |
| Grant date | Nov 27, 2012 |
| Priority date | — |
| Expiry date | Sep 13, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/124
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An optical semiconductor device is disclosed including an active region including an active layer and a diffraction grating having a λ/4 phase shift; passive waveguide regions each including a passive waveguide and a diffraction grating, disposed on the side of an emission facet and on the side of a rear facet sandwiching the active region between the passive waveguide regions, respectively; and an anti-reflection coating applied on the emission facet, wherein the passive waveguide region on the side of the emission facet has a length shorter than a length of the passive waveguide region on the side of the rear facet side.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.