Patent · US Active

Radiation-emitting semiconductor chip

US8319250B2 · kind B2 · utility

13Cited by

4References

17Claims

0Family size

Assignee

OSRAM Opto Semiconductors GmbH · DE

Inventors

Patrick Rode · Regensburg, DE
Lutz Hoeppel · Alteglofsheim, DE
Karl Engl · Niedergebraching, DE
Tony Albrecht · Bad Abbach, DE

Key dates

Filing date	Apr 17, 2009
Grant date	Nov 27, 2012
Priority date	—
Expiry date	Apr 17, 2029

Classification

Technology area (CPC H)Electricity
CPC primaryH10H20/8312
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A radiation-emitting semiconductor chip (1) is provided, which comprises a carrier (5), a semiconductor body (2) with a semiconductor layer sequence, a first contact (35) and a second contact (36). The semiconductor layer sequence comprises an active region (20) provided for generating radiation, which is arranged between a first semiconductor layer (21) and a second semiconductor layer (22). The carrier (5) comprises a major surface (51) facing the semiconductor body (2). The first semiconductor layer (21) is arranged on the side of the active region (20) facing the major surface (51) of the carrier (5) and is electrically contactable by means of the first contact (35). The second semiconductor layer (22) is electrically contactable by means of the second contact (36). A protection diode (4) is formed in a current path extending between the first contact (35) and the second contact (36) through the carrier (5).

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.