Laterally diffused metal-oxide-semiconductor device
US8319284B2 · kind B2 · utility
2Cited by
4References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 20, 2010 |
| Grant date | Nov 27, 2012 |
| Priority date | — |
| Expiry date | Mar 8, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/62
Abstract
A laterally diffused metal-oxide-semiconductor device includes a substrate, a gate dielectric layer, a gate polysilicon layer, a source region, a drain region, a body region, a first drain contact plug, a source polysilicon layer, an insulating layer, and a source metal layer. The source polysilicon layer disposed on the gate dielectric layer above the drain region can serve as a field plate to enhance the breakdown voltage and to increase the drain-to-source capacitance. In addition, the first drain contact plug of the present invention can reduce the drain-to-source on-resistance and the horizontal extension length.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.