Method and system of embedded microlens

US8319303B2 · kind B2 · utility

Assignee

• Semiconductor Manufacturing International (Shanghai) Corporation · CN

Inventors

• Jianping Yang · San Jose, US
• Herb He Huang · Shanghai, CN
• Jieguang Huo · Shanghai, CN

Key dates

• Filing date: Jan 10, 2011
• Grant date: Nov 27, 2012
• Expiry date: Jan 10, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F39/024

Abstract

An image sensor includes an array of photo-sensing regions formed in a semiconductor substrate, a dielectric layer over the array of photo-sensing regions, and an array of microlenses formed in the dielectric layer. Each of the microlenses is center-aligned over one of the photo-sensing regions and has a truncated plano-convex shape. The microlenses have an index of refraction that is higher than the dielectric layer's refraction index. Each of the microlenses has a smooth circular top, a flat circular bottom, and a curved circumferential side convex towards the semiconductor substrate.