Semiconductor device
US8319314B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 13, 2011 |
| Grant date | Nov 27, 2012 |
| Priority date | — |
| Expiry date | Jan 28, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/142
Abstract
A semiconductor device comprises a first base layer of a first conductivity type; a plurality of second base layers of a second conductivity type, provided on a part of a first surface of the first base layer; trenches formed on each side of the second base layers, and formed to be deeper than the second base layers; an emitter layer formed along the trench on a surface of the second base layers; a collector layer of the second conductivity type, provided on a second surface of the first base layer opposite to the first surface; an insulating film formed on an inner wall of the trench, the insulating film being thicker on a bottom of the trench than on a side surface of the trench; a gate electrode formed within the trench, and isolated from the second base layers and the emitter layer by the insulating film; and a space section provided between the second base layers adjacent to each other, the space section being deeper than the second base layers and being electrically isolated from the emitter layer and the second base layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.