Semiconductor device
US8319331B2 · kind B2 · utility
8Cited by
0References
17Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Mar 1, 2010 |
| Grant date | Nov 27, 2012 |
| Priority date | — |
| Expiry date | Oct 16, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/181
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed is a semiconductor device having improved heat dissipation efficiency. The semiconductor device includes a silicon interposer having a first surface and a second surface opposite the first surface. A plurality of semiconductor chips are provided on the first surface side of the silicon interposer. The silicon interposer has a plurality of via holes extending from the first surface to the second surface. An N type semiconductor and a P type semiconductor constituting a Peltier element are provided in each two of the via holes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.