Bias-based linear high efficiency radio frequency amplifier
US8319558B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 14, 2009 |
| Grant date | Nov 27, 2012 |
| Priority date | — |
| Expiry date | Jun 21, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03F2200/18
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
The present disclosure relates to RF power amplifier circuitry that may operate as either a Class AB amplifier or as a Class B amplifier based on a magnitude of RF output power provided by the RF power amplifier circuitry. A transistor bias circuit in the RF power amplifier circuitry may control transitioning between operating as the Class AB amplifier and operating as the Class B amplifier. When the magnitude of the RF output power is below a first threshold, the RF power amplifier circuitry may operate as a Class AB amplifier, and when the magnitude of the RF output power is above the first threshold, the RF power amplifier circuitry may operate as a Class B amplifier.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.