Electro-optic device
US8320037B2 · kind B2 · utility
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2References
19Claims
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Key dates
| Filing date | Jan 5, 2010 |
| Grant date | Nov 27, 2012 |
| Priority date | — |
| Expiry date | Jan 30, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F1/2257
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An electro-optic device is provided. The electro-optic device includes a junction layer disposed between a first conductivity type semiconductor layer and a second conductivity type semiconductor layer to which a reverse vias voltage is applied. The first conductivity type semiconductor layer and the second conductivity type semiconductor layer have an about 2 to 4-time doping concentration difference therebetween, thus making it possible to provide the electro-optic device optimized for high speed, low power consumption and high integration.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.